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2 edition of Heavy ion ranges in silicon and aluminium. found in the catalog.

Heavy ion ranges in silicon and aluminium.

D. D. Dodds

Heavy ion ranges in silicon and aluminium.

by D. D. Dodds

  • 6 Want to read
  • 37 Currently reading

Published by University of Salford in Salford .
Written in English


Edition Notes

PhD thesis, Electrical Engineering.

SeriesD37960/81
ID Numbers
Open LibraryOL20904871M

Metal ions such as aluminum, lithium, calcium, zinc, iron and copper are known to have a major impact on human health [1, 2] and the environment [3]. Several staining-based techniques have been. Aluminium alloys (or aluminum alloys; see spelling differences) are alloys in which aluminium (Al) is the predominant metal. The typical alloying elements are copper, magnesium, manganese, silicon, tin and are two principal classifications, namely casting alloys and wrought alloys, both of which are further subdivided into the categories heat-treatable and non-heat-treatable.

Cosmic ray heavy ion LET mapping for aluminum, silicon, and tissue targets. Washington, D.C.: National Aeronautics and Space Administration, Scientific and Technical Information Branch, (OCoLC) The average depth of the implanted ions is called the projected range Rp. Straggle: If Rp is the average projected range normal to the surface of silicon, ∆Rp is the standard deviation or straggle about that range. Implantation damage: The nature of damage path created by an incident ion will depend upon whether it is light or heavy relative.

U. Yarkulov, "Ranges of heavy ions in solids," Radiat. Effe () J. Albers, "Monte Carlo calculation of one- ad two-dimensional particle and damage distributions for ion-implanted dopants in silicon," IEEE Trans. Electron Devices. Get this from a library! Cosmic ray heavy ion LET mapping for aluminum, silicon, and tissue targets. [E G Stassinopoulos; J M Barth; Thomas M Jordan; United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch.].


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Heavy ion ranges in silicon and aluminium by D. D. Dodds Download PDF EPUB FB2

Since inner-shell energy-loss effects have been reported to give rise to oscillations in Rp for rare earth ions implanted into Si and Al targets, particular attention has been given to measuring the ranges of ions having 57range oscillations was found in either Si or Al by: 2.

Cosmic ray heavy ion LET mapping for aluminum, silicon, and tissue targets (NASA reference publication) Hardcover – January 1, by E. G Stassinopoulos (Author) See all formats and editions Hide other formats and editions. Price New from Used from Author: E.

G Stassinopoulos. Heavy ion ranges in silicon and aluminium. Author: Dodds, D. ISNI: Awarding Body: University of Salford Current Institution: University of Salford Date of Award: Availability of Full Text: Access from EThOS. The ranges of keV Pb ions in aluminium and silicon have been measured at 25 and −°C using backscattering techniques with a view to testing the disagreement existing between theory and experiment.

The disagreement can be explained as due mainly to experimental ambiguities. Previous article in issue Next article in issueCited by: 5. EFFECT OF THE HEAVY IONS TO THE SILICON DETECTORS ADNAN KILIC¸1 1Department of Physics, Uludag University, G˘ or¨ ukle, Bursa, Turkey¨ E-mail: [email protected] Received Septem Silicon particle detectors are used in several applications such as accelerators in high energy physics, space, nuclear physics experiments and Size: KB.

Range distributions of 5– keV boron ions in silicon dioxide have been measured by means of secondary ion mass spectrometry. Mean projected ranges are in good agreement with predictions of the.

The skew and kurtosis of 10–45 keV heavy-ion distributions in aluminium and silicon have been measured using the radiotracer and peeling technique, and compared with values calculated by the moments method of : Miko⌈aj Kisielewicz.

The silicon precipitates, present in commercial aluminum-silicon alloys, are almost pure, faceted crystals of this element (Fig. They can have different morphology: primary, compact, mas-sive precipitates in hypereutectic alloy or branched plates in alu-minum-silicon eutectic (Ref 10–13).

Silicon crystal lattice is A4, cubic, of diamond File Size: KB. Ion beam irradiation has been extensively used as an efficient tool to evaluate the tolerance of materials to extreme radiation environments 1,2,3,4,5,er, ion Cited by: Bethe-Bloch Equation (after 20 years)was based on three assumptions: 1) The ion is fully stripped (> 1 MeV/nucleon) 2) The ion moves faster than the target (orbital) electrons 3) The ion is much heavier than the target electrons.

10/22/ 7. β = v / c v velocity of the particle E energy of the Size: 1MB. instance, the ionization potentials of oxygen and nitrogen are and eV, respectively, whereas the mean energy to create an ion pair in air is 34 eV.

Material Air silicon (Si) germanium (Ge) gallium-arsenide (GaAs) silicon dioxide (SiO2) Ion pair generation energy (w) 34. Citations for Ion: Year Authors, Title, Journal Citation and Comments Numb Pub. Citation Eu Neilson, G. Farmery, B. Thompson, M. 'Heavy Ion Ranges at keV in Aluminum' Neil Phys.

Letters A, 46, (). Citations for Ion: Year Authors, Title, Journal Citation and Comments Numb Pub. Citation Tb Freitag, K. Reschke, D. Geyer, E. 'Stopping Power Measurements for Low Energy Ions in Gases by Time-of-Flight Spectroscopy' Frei Nucl. Inst. Methods, B27, () Comment: S.

Heavy Ions () at 27 - 90 keV -> H2 (gas). In addition to heavy-ion irradiation, X-rays ( kV, 20 mA) were used. The dose rate was Gy/min, and mm copper and mm aluminum were used to filter the low energy radiation [15–17].

All heavy-ion irradiated samples were maintained at ambient temperature for a. Au ions ( keV) have been used to directly sputter etch microstructures in silicon, aluminum, copper and silver. The results presented clearly demonstrate that high energy heavy ions can be used to fabricate microstructures in selected metals and silicon in a single step by: 6.

M-shell X-ray cross sections for keV Pr and Tb bombardment of Al and Si have been measured. They do not explain the anomalies reported earlier for Cited by: 3. used electrolytic iron, pure aluminium and metallic silicon (unspecified purity).

Over ternary alloys were prepared using master alloys of selected compositions in an arc furnace, under hydrogen atmosphere with NaCl as flux on the molten surface of the alloys, followed by cooling at.

like heavy metal ions. The immobilisation of xenobiotics is mainly due to sorption properties which are deter-mined by physicochemical properties of the soil such as: amount of clay and organic fraction, pH, water content, temperature of the soil and properties of the particular metal ion [16, 24].

Fig. line paths. In contrast with the exponential decrease of neutrons and gamma rays, the heavy particle has a well-defined range of only a few centimeters in air, even for quite energetic particles. For example, a 4 MeV alpha particle has a range of cm in air; a 4 MeV proton has a range in air of 22 cm.

Light Charged Particles. Concerning the role of inelastic scattering in heavy ion ranges in aluminum and silicon: Authors: Abstract M-shell X-ray cross sections for keV Pr and Tb bombardment of Al and Si have been measured. They do not explain the anomalies reported earlier for rare earth ion ranges in Al.

Bibtex entry for this abstract Preferred format for. Microscopic strength of silicon particles in an aluminium–silicon alloy Article (PDF Available) in Acta Materialia February with Reads How we measure 'reads'.These ions, known as "incident ions", set off collision cascades in the target.

Such cascades can take many paths; some recoil back toward the surface of the target. If a collision cascade reaches the surface of the target, and its remaining energy is greater than the target's surface binding energy, an atom will be process is known as "sputtering".As high-energy heavy ions influence semiconductor device study, we plan to research the high-energy heavy ions’ influence on the silicon interposer in the same way.

We can use TCAD software to simulate the electrical properties of the silicon interposer under heavy ion irradiation with different energies and kinds of : Wenchao Tian, Tianran Ma, Xiaohan Liu.